HGTP3N60A4
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 17A 70W TO220AB
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Buying Options
Total Price: USD $1.22
Unit Price: USD $1.2232
≥1 USD $1.2232
Inventory: 106658
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 70W
Current Rating 17A
Number of Elements 1
Element Configuration Single
Power Dissipation 70W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 11 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 17A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.05V
Turn On Time 17.5 ns
Test Condition 390V, 3A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 21nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 6ns/73ns
Switching Energy 37μJ (on), 25μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 100 ns
Dimensions
Height 9.02mm
Length 10.28mm
Width 4.57mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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