HGTG30N60B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins
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Buying Options
Total Price: USD $2.78
Unit Price: USD $2.7808
≥1 USD $2.7808
Inventory: 16207
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.82mm
Length 15.87mm
Height 20.82mm
Technical
Fall Time-Max (tf) 150 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 500μJ (on), 680μJ (off)
Td (on/off) @ 25°C 36ns/137ns
Current - Collector Pulsed (Icm) 220A
Gate Charge 170nC
Turn Off Time-Nom (toff) 365 ns
Continuous Collector Current 60A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Test Condition 480V, 30A, 3 Ω, 15V
Turn On Time 56 ns
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.45V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 208W
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number HGTG30N60
Current Rating 60A
Max Power Dissipation 208W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.39g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
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