Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 463W
Base Part Number HGTG30N60
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 150 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Test Condition 390V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Continuous Collector Current 75A
Turn Off Time-Nom (toff) 238 ns
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 25ns/150ns
Switching Energy 280μJ (on), 240μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V