HGT1S12N60A4DS
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail
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Buying Options
Total Price: USD $3.26
Unit Price: USD $3.2648
≥1 USD $3.2648
Inventory: 2447
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Max Power Dissipation 167W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number HGT1S12N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 167W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 17 μs
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 96 μs
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 54A
Reverse Recovery Time 30ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 33 ns
Test Condition 390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Turn Off Time-Nom (toff) 180 ns
Gate Charge 78nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55μJ (on), 50μJ (off)
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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