FGP5N60LS
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 10A 83W TO220
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Total Price: USD $0.66
Unit Price: USD $0.66
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Inventory: 19340
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.83mm
Length 10.67mm
Height 16.51mm
Technical
Gate-Emitter Thr Voltage-Max 4.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 38μJ (on), 130μJ (off)
Td (on/off) @ 25°C 4.3ns/36ns
Current - Collector Pulsed (Icm) 36A
Gate Charge 18.3nC
IGBT Type Field Stop
Turn Off Time-Nom (toff) 187 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 12V, 14A
Test Condition 400V, 5A, 10 Ω, 15V
Turn On Time 5.9 ns
Collector Emitter Saturation Voltage 1.8V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application GENERAL PURPOSE SWITCHING
Power - Max 83W
Input Type Standard
Element Configuration Single
Number of Elements 1
Max Power Dissipation 83W
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Alternative Model
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