FGP10N60UNDF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 600V 10A NPT IGBT
PDF
/
Buying Options
Total Price: USD $0.87
Unit Price: USD $0.8712
≥1 USD $0.8712
Inventory: 873
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 139W
Number of Elements 1
Element Configuration Single
Power Dissipation 139W
Input Type Standard
Turn On Delay Time 8.1 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 55 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 37.7 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Turn On Time 15.4 ns
Test Condition 400V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 10A
Turn Off Time-Nom (toff) 89.3 ns
IGBT Type NPT
Gate Charge 37nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 8ns/52.2ns
Switching Energy 150μJ (on), 50μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8.5V
Fall Time-Max (tf) 24.8 ns
Dimensions
Height 16.51mm
Length 10.67mm
Width 4.83mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
FGP10N60UNDF+price,FGP10N60UNDF+datasheet,FGP10N60UNDF+in stock,buy+FGP10N60UNDF,finder+FGP10N60UNDF,FGP10N60UNDF+tutorials,FGP10N60UNDF+download