Gate-Emitter Thr Voltage-Max 7.5V
Gate-Emitter Voltage-Max 25V
Switching Energy 2.5mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C 34ns/172ns
Current - Collector Pulsed (Icm) 105A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 35A
Test Condition 600V, 35A, 10 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 337 ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 368W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ