Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 1mJ (on), 520μJ (off)
Td (on/off) @ 25°C 21ns/126ns
Current - Collector Pulsed (Icm) 160A
Turn Off Time-Nom (toff) 201 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Test Condition 400V, 40A, 10 Ω, 15V
Collector Emitter Saturation Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 36 ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 126 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 290W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ