FGH75T65UPD
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 650V 150A 187W
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Buying Options
Total Price: USD $5.53
Unit Price: USD $5.5264
≥1 USD $5.5264
≥10 USD $4.40939
≥100 USD $3.94526
≥500 USD $3.481122
≥1000 USD $3.133011
≥3000 USD $2.935742
Inventory: 1357
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status ACTIVE, NOT REC (Last Updated: 6 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 375W
Rise Time-Max 56ns
Element Configuration Single
Input Type Standard
Power - Max 375W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 150A
Reverse Recovery Time 85 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.3V
Test Condition 400V, 75A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge 385nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 32ns/166ns
Switching Energy 2.85mJ (on), 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
Dimensions
Height 20.82mm
Length 15.87mm
Width 4.82mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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