Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.05mJ (on), 1.35mJ (off)
Td (on/off) @ 25°C 27ns/128ns
Current - Collector Pulsed (Icm) 225A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 75A
Test Condition 400V, 75A, 3 Ω, 15V
Collector Emitter Saturation Voltage 600V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 452W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ