Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 600W
Base Part Number FGH60N60
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 146 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 39 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Test Condition 400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
Turn Off Time-Nom (toff) 163 ns
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 18ns/104ns
Switching Energy 1.26mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V