Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.79mJ (on), 670μJ (off)
Td (on/off) @ 25°C 22ns/134ns
Current - Collector Pulsed (Icm) 180A
Turn Off Time-Nom (toff) 187 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Test Condition 400V, 60A, 5 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 47 ns
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number FGH60N60
Max Power Dissipation 378W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ