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FGH40T65UPD

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT Transistors 650 V 80 A 268 W
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Buying Options
Total Price: USD $5.62
Unit Price: USD $5.618
≥1 USD $5.618
≥10 USD $5.3
≥100 USD $5
≥500 USD $4.71698
≥1000 USD $4.44998
≥3000 USD $4.1981
Inventory: 360
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Dimensions

Width 4.82mm
Length 15.87mm
Height 20.82mm

Technical

Fall Time-Max (tf) 22 ns
Gate-Emitter Thr Voltage-Max 7.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.59mJ (on), 580μJ (off)
Td (on/off) @ 25°C 20ns/144ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 177nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 213 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Test Condition 400V, 40A, 7 Ω, 15V
Turn On Time 57 ns
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 650V
JEDEC-95 Code TO-247AB
Reverse Recovery Time 43 ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 268W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 268W
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Weight 6.39g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Factory Lead Time 50 Weeks

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