Gate-Emitter Thr Voltage-Max 7.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.59mJ (on), 580μJ (off)
Td (on/off) @ 25°C 20ns/144ns
Current - Collector Pulsed (Icm) 120A
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 213 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Test Condition 400V, 40A, 7 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 43 ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 268W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~175°C TJ