Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.3mJ (on), 260μJ (off)
Td (on/off) @ 25°C 12ns/92ns
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 132 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Test Condition 400V, 40A, 6 Ω, 15V
Collector Emitter Saturation Voltage 1.9V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 90ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 92 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number FGH40N60
Max Power Dissipation 349W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ