Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.13mJ (on), 310μJ (off)
Td (on/off) @ 25°C 25ns/115ns
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 170 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A
Test Condition 400V, 40A, 10 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 45 ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 115 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number FGH40N60
Max Power Dissipation 290W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ