Gate-Emitter Thr Voltage-Max 7.5V
Gate-Emitter Voltage-Max 25V
Switching Energy 2.3mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C 15ns/110ns
Current - Collector Pulsed (Icm) 160A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
Test Condition 600V, 40A, 5 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 64A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 417W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)