FGH25N120FTDS
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 50A 313W TO247
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Buying Options
Total Price: USD $7.38
Unit Price: USD $7.37865
≥1 USD $7.37865
≥10 USD $6.05435
≥100 USD $5.8653
≥500 USD $5.67625
≥1000 USD $5.4872
Inventory: 1133
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 313W
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 313W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 535 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 63 ns
Test Condition 600V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A
Turn Off Time-Nom (toff) 299 ns
IGBT Type Trench Field Stop
Gate Charge 169nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 26ns/151ns
Switching Energy 1.42mJ (on), 1.16mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Dimensions
Height 20.82mm
Length 15.87mm
Width 4.82mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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