Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 380μJ (on), 260μJ (off)
Td (on/off) @ 25°C 13ns/87ns
Current - Collector Pulsed (Icm) 60A
Turn Off Time-Nom (toff) 155 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A
Test Condition 400V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 34 ns
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 87 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 165W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ