Gate-Emitter Thr Voltage-Max 8.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 99μJ (on), 104μJ (off)
Td (on/off) @ 25°C 5.9ns/32.3ns
Current - Collector Pulsed (Icm) 21A
Turn Off Time-Nom (toff) 146.8 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 7A
Test Condition 400V, 7A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 32.3 ns
Max Collector Current 14A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 83W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ