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FGB40N60SM

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description Trans IGBT Chip N-CH 600V 80A 3-Pin(2+Tab) D2PAK T/R
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Buying Options
Total Price: USD $4.3
Unit Price: USD $4.2959
≥1 USD $4.2959
≥10 USD $3.52545
≥100 USD $3.41525
≥500 USD $3.30505
≥1000 USD $3.19485
Inventory: 42109
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 349W
Terminal Form GULL WING
Base Part Number FGB40N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 28 ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 349W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Max Breakdown Voltage 600V
Turn On Time 37 ns
Test Condition 400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
Turn Off Time-Nom (toff) 132 ns
IGBT Type Field Stop
Gate Charge 119nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 12ns/92ns
Switching Energy 870μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 17 ns

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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