Gate-Emitter Thr Voltage-Max 2.2V
Td (on/off) @ 25°C -/4.7μs
Turn Off Time-Nom (toff) 7300 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 4V, 6A
Test Condition 300V, 1k Ω, 5V
Max Breakdown Voltage 430V
Collector Emitter Breakdown Voltage 430V
Max Collector Current 21A
Collector Emitter Voltage (VCEO) 1.85V
Turn-Off Delay Time 4.7 μs
Polarity/Channel Type N-CHANNEL
Turn On Delay Time 600 ns
Element Configuration Single
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ