FGAF40N60SMD
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 600 V 80 A 79 W
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Buying Options
Total Price: USD $6.91
Unit Price: USD $6.91315
≥1 USD $6.91315
≥10 USD $5.67245
≥100 USD $5.4948
≥500 USD $5.31715
≥1000 USD $5.14045
Inventory: 135
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Dimensions
Width 3.2mm
Length 15.7mm
Height 26.7mm
Technical
Fall Time-Max (tf) 17 ns
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 870μJ (on), 260μJ (off)
Td (on/off) @ 25°C 12ns/92ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 119nC
IGBT Type Field Stop
Turn Off Time-Nom (toff) 132 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 40A
Test Condition 400V, 40A, 6 Ω, 15V
Turn On Time 37 ns
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 36 ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 115W
Input Type Standard
Case Connection ISOLATED
Element Configuration Single
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 115W
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 6.962g
Number of Pins 3
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Alternative Model
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