FGA50S110P
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1100V 50A 300W TO3PN
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Buying Options
Total Price: USD $1.46
Unit Price: USD $1.4608
≥1 USD $1.4608
Inventory: 31396
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5mm
Length 15.8mm
Height 20.1mm
Technical
Gate-Emitter Thr Voltage-Max 7.5V
Gate-Emitter Voltage-Max 25V
Current - Collector Pulsed (Icm) 120A
Gate Charge 195nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 492 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Turn On Time 370 ns
Collector Emitter Saturation Voltage 2.7V
Voltage - Collector Emitter Breakdown (Max) 1100V
Collector Emitter Breakdown Voltage 1.1kV
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.1kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Power Dissipation 300W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 6.401g
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 15 Weeks
Alternative Model
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