FGA50N100BNTDTU
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 50A 156W TO3P
PDF
/
Buying Options
Total Price: USD $38.71
Unit Price: USD $38.70965
≥1 USD $38.70965
≥10 USD $31.76135
≥100 USD $30.76955
≥500 USD $29.7768
≥1000 USD $28.78405
Inventory: 1195
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 156W
Number of Elements 1
Element Configuration Single
Power Dissipation 156W
Fall Time-Max (tf) 250ns
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 25V
Current - Collector Pulsed (Icm) 100A
Gate Charge 275nC
IGBT Type NPT and Trench
Turn Off Time-Nom (toff) 760 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn On Time 460 ns
Collector Emitter Saturation Voltage 2.5V
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
Reverse Recovery Time 1.5μs
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1kV
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Input Type Standard
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5mm
Length 15.8mm
Height 20.1mm
Alternative Model
Recommended For You
FGA50N100BNTDTU+price,FGA50N100BNTDTU+datasheet,FGA50N100BNTDTU+in stock,buy+FGA50N100BNTDTU,finder+FGA50N100BNTDTU,FGA50N100BNTDTU+tutorials,FGA50N100BNTDTU+download