FGA30S120P
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors Shorted AnodeTM IGBT
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Buying Options
Total Price: USD $5.11
Unit Price: USD $5.107018
≥1 USD $5.107018
≥10 USD $4.989284
≥100 USD $4.910795
≥500 USD $2.0159
≥1000 USD $1.94845
≥3000 USD $1.74705
Inventory: 12
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 348W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Rise Time-Max 490ns
Element Configuration Single
Input Type Standard
Power - Max 348W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.3kV
Max Collector Current 60A
Collector Emitter Breakdown Voltage 1.3kV
Voltage - Collector Emitter Breakdown (Max) 1300V
Collector Emitter Saturation Voltage 2.3V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 78nC
Current - Collector Pulsed (Icm) 150A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Dimensions
Height 20.1mm
Length 15.8mm
Width 5mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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