FGA30N65SMD
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 650V 30A FS Planar Gen2 IGBT
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Total Price: USD $1.86
Unit Price: USD $1.8568
≥1 USD $1.8568
Inventory: 8443
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5mm
Length 16.2mm
Height 20.1mm
Technical
Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 716μJ (on), 208μJ (off)
Td (on/off) @ 25°C 14ns/102ns
Current - Collector Pulsed (Icm) 90A
Gate Charge 87nC
IGBT Type Field Stop
Turn Off Time-Nom (toff) 125 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Test Condition 400V, 30A, 6 Ω, 15V
Turn On Time 41 ns
Collector Emitter Saturation Voltage 2.29V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 35ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Power Dissipation 300W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2012
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 6.401g
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 5 Weeks
Alternative Model
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