Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 35 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 30A, 6.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Turn Off Time-Nom (toff) 2870 ns
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 18ns/250ns
Switching Energy 1.1mJ (on), 21mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 2000ns