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FGA25N120FTD

ON Semiconductor
RoHS
/
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 50A 313W TO3P
PDF
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Buying Options
Total Price: USD $8.3
Unit Price: USD $8.2954
≥1 USD $8.2954
≥10 USD $6.80675
≥100 USD $6.59395
≥500 USD $6.38115
≥1000 USD $6.16835
Inventory: 22
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Switching Energy 340μJ (on), 900μJ (off)
Td (on/off) @ 25°C 48ns/210ns
Current - Collector Pulsed (Icm) 75A
Gate Charge 160nC
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A
Test Condition 600V, 25A, 15 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 770 ns
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 210 ns
Power - Max 313W
Turn On Delay Time 48 ns
Input Type Standard
Element Configuration Single
Max Power Dissipation 313W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole

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