Gate-Emitter Thr Voltage-Max 7.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 4.1mJ (on), 960μJ (off)
Td (on/off) @ 25°C 50ns/190ns
Current - Collector Pulsed (Icm) 90A
Continuous Collector Current 50A
Max Junction Temperature (Tj) 150°C
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A
Test Condition 600V, 25A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.65V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 350 ns
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 190 ns
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Base Part Number FGA25N120A
Max Power Dissipation 312W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ