Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 272W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.4kV
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1.4kV
Voltage - Collector Emitter Breakdown (Max) 1400V
Collector Emitter Saturation Voltage 2.2V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A
Turn Off Time-Nom (toff) 776 ns
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 60A
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V