Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 30V
Switching Energy 1652μJ (on), 1389μJ (off)
Td (on/off) @ 25°C 18ns/149ns
Current - Collector Pulsed (Icm) 239A
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A
Test Condition 600V, 47A, 4.7 Ω, 15V
Collector Emitter Breakdown Voltage 900V
Max Collector Current 145A
Collector Emitter Voltage (VCEO) 900V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 625W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ