APT75GN120B2G
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3 Variant
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 200A 833W TMAX
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Buying Options
Total Price: USD $17.64
Unit Price: USD $17.64245
≥1 USD $17.64245
≥10 USD $14.4761
≥100 USD $14.0239
≥500 USD $13.5717
≥1000 USD $13.11855
Inventory: 9703
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 833W
Current Rating 200A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 200A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 101 ns
Test Condition 800V, 75A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn Off Time-Nom (toff) 925 ns
IGBT Type Trench Field Stop
Gate Charge 425nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 60ns/620ns
Switching Energy 8045μJ (on), 7640μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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