Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 30V
Switching Energy 715μJ (on), 607μJ (off)
Td (on/off) @ 25°C 21ns/133ns
Current - Collector Pulsed (Icm) 202A
Turn Off Time-Nom (toff) 304 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Test Condition 400V, 40A, 4.7 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 121A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 520W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish PURE MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ