Gate-Emitter Thr Voltage-Max 6V
Switching Energy 605μJ (on), 895μJ (off)
Td (on/off) @ 25°C 30ns/90ns
Current - Collector Pulsed (Icm) 250A
Turn Off Time-Nom (toff) 220 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
Test Condition 400V, 65A, 5 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 198A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 833W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~150°C TJ