APT54GA60B
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 96A 416W TO-247
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Technical Details
Technical
Turn Off Time-Nom (toff) 291 ns
IGBT Type PT
Gate Charge 158nC
Current - Collector Pulsed (Icm) 161A
Td (on/off) @ 25°C 17ns/112ns
Switching Energy 534μJ (on), 466μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 32A
Test Condition 400V, 32A, 4.7 Ω, 15V
Turn On Time 37 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Max Collector Current 96A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 416W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Max Power Dissipation 416W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish PURE MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series POWER MOS 8?
Published 1999
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 29 Weeks
Alternative Model
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