APT50GF120B2RG
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3 Variant
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 135A 781W TMAX
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Buying Options
Total Price: USD $48.77
Unit Price: USD $48.774235
≥1 USD $48.774235
≥200 USD $19.461117
≥500 USD $18.811231
≥1000 USD $18.489571
Inventory: 1851
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 781W
Current Rating 156A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 781W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 135A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 106 ns
Test Condition 800V, 50A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 50A
Turn Off Time-Nom (toff) 520 ns
IGBT Type NPT
Gate Charge 340nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 25ns/260ns
Switching Energy 3.6mJ (on), 2.64mJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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