APT45GR65SSCD10
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
INSULATED GATE BIPOLAR TRANSISTO
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Td (on/off) @ 25°C 15ns/100ns
Current - Collector Pulsed (Icm) 224A
Gate Charge 203nC
IGBT Type NPT
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
Test Condition 433V, 45A, 4.3 Ω, 15V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 80 ns
Max Collector Current 118A
Collector Emitter Voltage (VCEO) 2.4V
Power - Max 543W
Input Type Standard
Max Power Dissipation 543W
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2001
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 22 Weeks
Alternative Model
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