APT45GR65B2DU30
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
INSULATED GATE BIPOLAR TRANSISTO
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 543W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 543W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 118A
Reverse Recovery Time 80 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 650V
Turn On Time 47 ns
Test Condition 433V, 45A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
Turn Off Time-Nom (toff) 175 ns
IGBT Type NPT
Gate Charge 203nC
Current - Collector Pulsed (Icm) 224A
Td (on/off) @ 25°C 15ns/100ns
Compliance
RoHS Status RoHS Compliant
Alternative Model
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