Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 30V
Switching Energy 900μJ (on), 580μJ (off)
Td (on/off) @ 25°C 15ns/100ns
Current - Collector Pulsed (Icm) 168A
Continuous Collector Current 118A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
Test Condition 433V, 45A, 4.3 Ω, 15V
Collector Emitter Saturation Voltage 1.9V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 92A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 357W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)