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APT44GA60BD30

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 78A 337W TO-247
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Buying Options
Total Price: USD $16.1
Unit Price: USD $16.097467
≥1 USD $16.097467
≥200 USD $6.42402
≥500 USD $6.208704
≥1000 USD $6.102359
Inventory: 9912
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 29 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 8?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 337W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 337W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 78A
Collector Emitter Breakdown Voltage 600V
Turn On Time 29 ns
Test Condition 400V, 26A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 26A
Turn Off Time-Nom (toff) 208 ns
IGBT Type PT
Gate Charge 128nC
Current - Collector Pulsed (Icm) 130A
Td (on/off) @ 25°C 16ns/84ns
Switching Energy 409μJ (on), 258μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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