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RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 78A 337W TO-247
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Buying Options
Total Price: USD $5.37
Unit Price: USD $5.37035
≥1 USD $5.37035
≥10 USD $4.4061
≥100 USD $4.26835
≥500 USD $4.1306
≥1000 USD $3.99285
Inventory: 51
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 30V
Switching Energy 409μJ (on), 258μJ (off)
Td (on/off) @ 25°C 16ns/84ns
Current - Collector Pulsed (Icm) 130A
Gate Charge 128nC
IGBT Type PT
Turn Off Time-Nom (toff) 208 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 26A
Test Condition 400V, 26A, 4.7 Ω, 15V
Turn On Time 29 ns
Collector Emitter Breakdown Voltage 600V
Max Collector Current 78A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 337W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Max Power Dissipation 337W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish TIN SILVER COPPER
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series POWER MOS 8?
Published 1999
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 22 Weeks

Alternative Model

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