Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 30V
Switching Energy 409μJ (on), 258μJ (off)
Td (on/off) @ 25°C 16ns/84ns
Current - Collector Pulsed (Icm) 130A
Turn Off Time-Nom (toff) 208 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 26A
Test Condition 400V, 26A, 4.7 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 78A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 337W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ