APT36GA60B
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 65A 290W TO-247
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Buying Options
Total Price: USD $37.33
Unit Price: USD $37.32645
≥1 USD $37.32645
≥10 USD $30.62705
≥100 USD $29.6704
≥500 USD $28.7128
≥1000 USD $27.75615
Inventory: 4404
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 29 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 8?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 290W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 290W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 29 ns
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 262 ns
IGBT Type PT
Gate Charge 102nC
Current - Collector Pulsed (Icm) 109A
Td (on/off) @ 25°C 16ns/122ns
Switching Energy 307μJ (on), 254μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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