APT30GT60KRG
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 64A 250W TO220
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 30V
Switching Energy 525μJ (on), 600μJ (off)
Td (on/off) @ 25°C 12ns/225ns
Current - Collector Pulsed (Icm) 110A
Gate Charge 145nC
IGBT Type NPT
Turn Off Time-Nom (toff) 345 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Test Condition 400V, 30A, 10 Ω, 15V
Turn On Time 32 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 64A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Current Rating 64A
Max Power Dissipation 250W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Terminal Finish PURE MATTE TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series Thunderbolt IGBT?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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