APT30GN60BDQ2G
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 63A 203W TO247
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Buying Options
Total Price: USD $3.22
Unit Price: USD $3.2224
≥1 USD $3.2224
≥10 USD $2.64385
≥100 USD $2.5612
≥500 USD $2.47855
≥1000 USD $2.3959
Inventory: 100
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 30V
Switching Energy 525μJ (on), 700μJ (off)
Td (on/off) @ 25°C 12ns/155ns
Current - Collector Pulsed (Icm) 90A
Gate Charge 165nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 255 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Test Condition 400V, 30A, 4.3 Ω, 15V
Turn On Time 26 ns
Collector Emitter Breakdown Voltage 600V
Max Collector Current 63A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Current Rating 63A
Max Power Dissipation 203W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 1999
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 25 Weeks
Alternative Model
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