Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 30V
Switching Energy 742μJ (on), 427μJ (off)
Td (on/off) @ 25°C 16ns/122ns
Current - Collector Pulsed (Icm) 100A
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A
Test Condition 600V, 25A, 4.3 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 3.2V
Polarity/Channel Type N-CHANNEL
Max Power Dissipation 521W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ