APT25GR120BSCD10
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 75A 521W TO247
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 521W
Input Type Standard
Power - Max 521W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 25A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A
IGBT Type NPT
Gate Charge 203nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 16ns/122ns
Switching Energy 434μJ (on), 466μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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