Gate-Emitter Thr Voltage-Max 6.5V
Td (on/off) @ 25°C 22ns/280ns
Current - Collector Pulsed (Icm) 75A
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 560 ns
Continuous Collector Current 67A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Test Condition 800V, 25A, 1 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 67A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 280 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 272W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ