APT20GN60BG
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 40A 136W TO247
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Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 136W
Current Rating 40A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 19 ns
Test Condition 400V, 20A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 20A
Turn Off Time-Nom (toff) 290 ns
IGBT Type Trench Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 9ns/140ns
Switching Energy 230μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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