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APT200GN60B2G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 283A 682W TO247
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 13mJ (on), 11mJ (off)
Td (on/off) @ 25°C 50ns/560ns
Current - Collector Pulsed (Icm) 600A
Gate Charge 1180nC
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 200A
Test Condition 400V, 200A, 1 Ω, 15V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AC
Max Collector Current 283A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 560 ns
Polarity/Channel Type N-CHANNEL
Power - Max 682W
Turn On Delay Time 50 ns
Input Type Standard
Element Configuration Single
Pin Count 3
Max Power Dissipation 682W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 1999
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 24 Weeks

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