Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 13mJ (on), 11mJ (off)
Td (on/off) @ 25°C 50ns/560ns
Current - Collector Pulsed (Icm) 600A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 200A
Test Condition 400V, 200A, 1 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 283A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 560 ns
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 682W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ