APT102GA60L
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 183A 780W TO264
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 6V
Switching Energy 1.354mJ (on), 1.614mJ (off)
Td (on/off) @ 25°C 28ns/212ns
Current - Collector Pulsed (Icm) 307A
Gate Charge 294nC
IGBT Type PT
Turn Off Time-Nom (toff) 389 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 62A
Test Condition 400V, 62A, 4.7 Ω, 15V
Turn On Time 64 ns
Collector Emitter Breakdown Voltage 600V
Max Collector Current 183A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 780W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Pin Count 3
Max Power Dissipation 780W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 1999
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
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